p-i-n photodiodes. The elaborated p-i-n photodiode is based on materials: GaAs, AlGaAs, InP, InGaAs, InGaAsP. The manufacturing technology is based on liquid phase epitaxy.
UV radiation sensors. The elaborated ultraviolet radiation sensors are based on the basis of GaP-SnO2 structures; on the basis of GaAs-AlGaAs-SnO2 heterostructures and with defected layer.
Laser module DLC-500. Industries DLC module is a special designed InGaAs/AlGaAs/GaAs semiconductor laser diode incorporated in an optical system which allow to obtain the laser beam with the divergence no more than 3 mrad.
TERALASER. Elaboration of low energy consumption laser diodes based ( spectral range 850 - 1000 nm) medical apparatus for different therapeutic applications.
Our mainly directions in laboratory activity are:
-Elaboration of manufacturing technologies of epitaxial layers and heterostructures on III-V compounds by liquid phase epitaxy.
-Elaboration of control methods of epitaxial layers' electrophysical properties.
-Investigations in Schottky barriers, MOS structures, p-n homo- and heterojunctions on III-V compounds. Study of degradation mechanisms in semiconductor structures.



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